Current Issue : October-December Volume : 2022 Issue Number : 4 Articles : 5 Articles
Total ionizing dose (TID) effects from Co-60 gamma ray and heavy ion irradiation were studied at the 22-nm FD SOI technology node and compared with the testing results from the 28- nm FD SOI technology. Ring oscillators (RO) designed with inverters, NAND2, and NOR2 gates were used to observe the output frequency drift and current draw. Experimental results show a noticeable increased device current draw and decreases in RO frequencies where NOR2 ROs have the most degradation. As well, the functionality of a 256 kb SRAM block and shift-register chains were evaluated during C0-60 irradiation. SRAM functionality deteriorated at 325 krad(Si) of the total dosage, while the FF chains remained functional up to 1 Mrad(Si). Overall, the 22-nm FD SOI results show better resilience to TID effects compared to the 28-nm FD SOI technology node....
In order to improve the performance optimization effect of electronic components, this paper uses the improved GA to construct the performance optimization system of electronic components. Moreover, this paper proposes an optimized reliability allocation process method based on cost function, which further optimizes the reliability design of electronic circuit systems. In addition, this paper conducts a sensitivity analysis of the electronic circuit system and compares and analyzes the evaluation results of component sensitivity and comprehensive importance based on simulation. Finally, this paper compares and demonstrates the different influences of various components in the electronic circuit system on the whole system. The experimental research shows that the performance optimization system of electronic components based on the improved GA proposed in this paper has a certain effect on improving the performance of electronic components....
In this paper, a circuit technique to extend the measuring range of a linear variable differential transformer (LVDT) is proposed. The transfer characteristic of the LVDT contains the odd function form of the cubic polynomial. Therefore, the measuring range of a commercial LVDT is linear in a narrow range compared to its physical dimensions. The wide measuring range of the LVDT requires a large structure of the LVDT, which increases the scale and the cost of the measurement system. The measuring range of the LVDT can be linearly extended to the maximum of the stroke range using the proposed technique. The realization of the proposed technique is based on the use of the hyperbolic sine (sinh) function of the electronic circuit building block, named the class AB bipolar amplifier. The class AB bipolar amplifier can be obtained by the current feedback operational amplifier (CFOA). The circuit of the proposed technique requires two CFOAs and an operational transconductance amplifier (OTA) as the active devices and all devices used in the proposed technique to synthesize the sinh function are commercially available. The proposed technique exhibits an ability to compensate for the nonlinear characteristic of the LVDT without digital components. The proposed technique is attractive in terms of its simple circuit configuration, small size, and low cost. The linear range extension of the LVDT used in this paper is significantly increased with a maximum error of about 18.3 μm of 6.2 mm at the full stroke range or the full-scale percentage error of about 0.295%. The results indicate that the proposed technique provides excellent performance to extend the measuring range of the LVDT without modifying the LVDT structure....
Optically controlled supercapacitors (S-C) could be of interest to the sensor community, as well as set the stage for novel optoelectronic charging devices. Here, structures constructed of two parallel transparent current collectors (indium-tin-oxide, ITO films on glass substrates) were considered. Active-carbon (A-C) films were used as electrodes. Two sets of electrodes were used: as-is electrodes that were used as the reference and electrodes that were embedded with submicronor micron-sized titanium oxide (TiO2) colloids. While immersed in a 1 M Na2SO4, the electrodes exhibited minimal thermal effects (<3 ◦C) throughout the course of experiments). The optically induced capacitance increase for TiO2-embedded S-C was large of the order of 30%, whereas S-C without the TiO2 colloids exhibited minimal optically related effects (<3%). Spectrally, the blue spectral band had a relatively larger impact on the light-induced effects. A lingering polarization effect that increased the cell capacitance in the dark after prolonged light exposure is noted; that effect occurred without an indication of a chemical reaction....
Highly sensitive ultraviolet (UV) photodetectors are highly desired for industrial and scientific applications. However, the responsivity of silicon photodiodes in the UV wavelength band is relatively low due to high-density Si/SiO2 interface states. In this paper, a coplanar avalanche photodiode (APD) was developed with a virtual guard ring design. When working in Geiger mode, it exhibited a strong UV response. The responsivity of 4 × 103 A/W (corresponding to a gain of 8 × 106) at 261 nm is measured under the incident power of 0.6 μW with an excess bias of 1.5 V. To the best of our knowledge, the maximum 3-dB bandwidth of 1.4 GHz is the first report ever for a Si APD when working in the Geiger mode in spite of the absence of an integrated CMOS read-out circuit....
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